Si-MOS quantum dots are a complementary technology to the ion implanted phosphorus donor qubits that are one focus of CQC²T and also act as a ‘test bed’ to assess the potential of silicon spin qubit systems in general.

Silicon Metal-Oxide-Semiconductor (Si-MOS) Quantum dots are fabricated using similar materials and manufacturing processes (known as CMOS technology) as conventional transistors, which number in their billions on every computer chip.

In CQC²T we use Si-MOS quantum dots as sensing devices, known as Single Electron Transistors (SETs), to enable quantum state read out of implanted P-atom spin qubits. In addition, quantum dots are being explored as quantum interconnect devices to connect distant P-atom qubits.

Si-MOS quantum dots can also be operated as spin qubits themselves and can be used to understand the decoherence processes that P-atom qubits will face in future silicon quantum computer architectures.

Platform Leaders

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Featured Publications

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Single-electron spin resonance in a nanoelectronic device using a global field E Vahapoglu, JP Slack-Smith, RCC Leon, WH Lim, FE Hudson, T Day, T Tanttu, CH Yang, A Laucht, AS Dzurak, JJ Pla Science Advances, 7, eabg9158 (2021)
Operation of a silicon quantum processor unit cell above one kelvin CH Yang, RCC Leon, JCC Hwang, A Saraiva, T Tanttu, W Huang, J Camirand Lemyre, KW Chan, KY Tan, FE Hudson, KM Itoh, A Morello, M Pioro-Ladrière, A Laucht, AS Dzurak Nature, 580, 350 (2020)
Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot RCC Leon, CH Yang, JC.C Hwang, J Camirand Lemyre, T Tanttu, W Huang, KW Chan, KY Tan, FE Hudson, KM Itoh, A Morello, A Laucht, M Pioro-Ladrière, A Saraiva, AS Dzurak

Nature Communications, 11, 797 (2020)
A silicon quantum-dot-coupled nuclear spin qubit B Hensen, W Huang, CH Yang, KW Chan, J Yoneda, T Tanttu, FE Hudson, A Laucht, KM Itoh, TD Ladd, A Morello, AS Dzurak

Nature Nanotechnology, 15, 13 (2020)
Single-spin qubits in isotopically enriched silicon at low magnetic field R Zhao, T Tanttu, KY Tan, B Hensen, KW Chan, JCC Hwang, RCC Leon, CH Yang, W Gilbert, FE Hudson, KM Itoh, AA Kiselev, TD Ladd, A Morello, A Laucht, AS Dzurak Nature Communications , 10, 5500 (2019)
Fidelity benchmarks for two-qubit gates in silicon W Huang, CH Yang, KW Chan, T Tanttu, B Hensen, RCC Leon, MA Fogarty, JCC Hwang, FE Hudson, KM Itoh, A Morello, A Laucht, AS Dzurak Nature, 569, 532 (2019)
Silicon qubit fidelities approaching incoherent noise limits via pulse engineering CH Yang, KW Chan, R Harper, W Huang, T Evans, JCC Hwang, B Hensen, A Laucht, T Tanttu, FE Hudson, ST Flammia, KM Itoh, A Morello, SD Bartlett, AS Dzurak Nature Electronics, 2, 151 (2019)
Gate-based single-shot readout of spins in silicon A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, MF Gonzalez-Zalba, F Hudson, A Morello, DJ Reilly, AS Dzurak Nature Nanotechnology, 14, 437 (2019)
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout MA Fogarty, KW Chan, B Hensen, W Huang, T Tanttu, CH Yang, A Laucht, M Veldhorst, FE Hudson, KM Itoh, D Culcer, TD Ladd, A Morello, AS Dzurak
Nature Communications, 9, 4370 (2018)
A two-qubit logic gate in silicon M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello & A. S. Dzurak Nature, 526, 410 (2015)
An addressable quantum dot qubit with fault-tolerant control-fidelity M. Veldhorst, J. C. C. Hwang, C. H. Yang, A. W. Leenstra, B. de Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, K. M. Itoh, A. Morello & A. S. Dzurak Nature Nanotechnology, 9, 981 (2014)
High-fidelity readout and control of a nuclear spin qubit in silicon J.J. Pla, K.Y. Tan, J.P. Dehollain, W.H. Lim, J.J.L. Morton, F.A. Zwanenburg, D.N. Jamieson, A.S. Dzurak and A. Morello Nature, 496, 334 (2013)
A single-atom electron spin qubit in silicon J.J. Pla, K.Y. Tan, J.P. Dehollain, W-H. Lim, J.J.L. Morton, D.N. Jamieson, A.S. Dzurak and A. Morello Nature, 489, 541 (2012)
Single-shot readout of an electron spin in silicon A. Morello, J.J. Pla, F.A. Zwanenburg, K.W. Chan, H. Huebl, M. M Nature, 467, 687 (2010)
Gate-Defined Quantum Dots in Intrinsic Silicon S.J. Angus, A.J. Ferguson, A.S. Dzurak and R.G. Clark Nano Letters, 7, 2051 (2007)

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