The Precision Qubit Processor Program led by Professor Michelle Y. Simmons, based at UNSW Sydney, has the ultimate goal of developing a scalable, phosphorus in silicon, quantum processor.

Professor Simmons’s group leads the field internationally in making precision atomic electronic devices in silicon for both conventional and quantum computing. Using a combination of scanning tunneling microscopy and molecular beam epitaxy phosphorus dopant atoms are controllably placed in Si devices with atomic precision.

This has led to the development of the narrowest conducting wires in silicon, the development of the smallest precision transistors, the first two qubit gate between atom qubits in silicon and more complex architectures towards error correction.

The Program is currently developing all the functional elements for an error corrected scalable spin-based quantum computer, including techniques for multiplexed parallel qubit addressability, 3D atomic precision patterning, fast gate-based read-out, and both error detection and correction.


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Featured publications

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Coherent control of a donor-molecule electron spin qubit in silicon L Fricke, SJ Hile, L Kranz, Y Chung, Y He, P Pakkiam, MG House, JG Keizer, MY Simmons Nature Communications, 12, 3323 (2021)
Valley interference and spin exchange at the atomic scale in silicon B Voisin, J.Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, MY Simmons, LCL Hollenberg, S Rogge Nature Communications, 11, 6124 (2020)
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, MY Simmons Advanced Materials, 32, 2003361 (2020)
Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit D Keith, MG House, MB Donnelly, TF Watson, B Weber, MY Simmons Physical Review X, 9, 041003 (2019)
A two-qubit gate between phosphorus donor electrons in silicon Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons Nature, 571, 371 (2019)
Benchmarking high fidelity single-shot readout of semiconductor qubits D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons New Journal of Physics, 21, 63011 (2019)