Ion implantation is the standard technology used in the semiconductor industry to introduce dopants in silicon electronic devices. It is also the technology that underpins the pioneering demonstrations of our spin-based qubits in silicon, while retaining compatibility with standard manufacturing processes.

Ion implanted donor qubit research within CQC²T leads the world in the development of single-atom quantum devices in silicon. The spin of an electron or a nucleus constitutes a natural quantum bit, with two well-defined quantum states and no spurious leakage states. We use such spins to encode and process digital quantum information.

The focus of our activities within CQC²T is the development of methods to scale up implanted donor spin qubits, using deterministic counted single-ion implantation for large qubit arrays, and engineering short, medium and long distance entanglement between the spins.

This requires engineering the interaction between the donors in order to enable entangling multi-qubit logic operations. It also requires a detailed understanding of the noise sources that may affect the quality of the operations.

Platform Leaders

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Featured Publications

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Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion-Solid Interactions AM Jakob, SG Robson, V Schmitt, V Mourik, M Posselt, D Spemann, BC Johnson, HR Firgau, E Mayes, JC McCallum, A Morello, DN Jamieson Advanced Materials, 2103235 (2021)
Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson Physical Review Materials, 5, 014601 (2021)
Controllable freezing of the nuclear spin bath in a single-atom spin qubit MT Mądzik, TD Ladd, FE Hudson, KM Itoh, AM Jakob, BC Johnson, JC McCallum, DN Jamieson, AS Dzurak, A Laucht, A Morello Science Advances , 6, eaba3442 (2020)
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking J.T. Muhonen, A. Laucht, S. Simmons, J.P. Dehollain, R. Kalra, F.E. Hudson, S. Freer, K.M. Itoh, D.N. Jamieson, J.C. McCallum, A.S. Dzurak and A. Morello Journal of Physics-Condensed Matter, 27, 154205 (2015)
Storing quantum information for 30 seconds in a nanoelectronic device J.T. Muhonen, J.P. Dehollain, A. Laucht, F.E. Hudson, T. Sekiguchi, K.M. Itoh, D.N. Jamieson, J.C. McCallum, A.S. Dzurak, A. Morello Nature Nanotechnology, 9, 986 (2014)
Silicon quantum processor with robust long-distance qubit couplings G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg, R Rahman, G Klimeck and A Morello Nature Communications, 8, 450 (2017)
Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device MT Ma̧dzik, A Laucht, FE Hudson, AM Jakob, BC Johnson, DN Jamieson, KM Itoh, AS Dzurak, A Morello Nature Communications, 12, 181 (2021)
High-fidelity readout and control of a nuclear spin qubit in silicon J.J. Pla, K.Y. Tan, J.P. Dehollain, W.H. Lim, J.J.L. Morton, F.A. Zwanenburg, D.N. Jamieson, A.S. Dzurak and A. Morello Nature, 496, 334 (2013)
A single-atom electron spin qubit in silicon J.J. Pla, K.Y. Tan, J.P. Dehollain, W-H. Lim, J.J.L. Morton, D.N. Jamieson, A.S. Dzurak and A. Morello Nature, 489, 541 (2012)